Replace Mosfet Toshiba Mosfet K2611 Test On Me Solenoid Motor

Type Designator: K2611 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 300 W Maximum Drain-Source Voltage |Vds|: 900 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V Maximum Drain Current |Id|: 11 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 72 nC Rise Time (tr): 135 nS Drain-Source Capacitance (Cd): 260 pF Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm Package: TO-247

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K2611 Datasheet (PDF)

0.1. 2sk2611.pdf

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =0.2. k2611s.pdf

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K2611SK2611SK2611SK2611SSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)
V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power0.3. k2611.pdf

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K2611K2611K2611K2611Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 11A,900V, R (Max1.10)
V =10VDS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode power fi0.4. k2611b.pdf

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K2611BK2611BK2611BK2611BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 11A,900V, R (Max1.10)
V =10VDS(on) GS Ultra-low Gate charge(Typical 72nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode powe0.5. k2611sb.pdf

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K2611SBK2611SBK2611SBK2611SBSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)

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V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mode p0.6. 2sk2611.pdf

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isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A
T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.A
Datasheet: CSD87334Q3D, CSD87350Q5D, CSD87351Q5D, CSD87352Q5D, CSD87353Q5D, CSD87501L, CSD88539ND, CSD9024, IRFZ44A, K2611B, K2611S, K2611SB, K2698, K2698B, K2837, K2837B, KDB15N50.

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LIST

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MOSFET: CJAC20N03 | CJAC150N03 | CJAC13TH06 | CJAC110SN10 | CJAC110N03 | CJAC10TH10 | CJAC10H02 | CJAC100SN08 | CJAC100P03 | CJAC0410 | CJAB60N03 | CJAB55N03 | CJAB40SN10 | CJAB40N03 | CJAB35P03 | CJAB25SN06

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